Interplay between exchange-split Dirac and Rashba-type surface states at the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mi>BiTeI</mml:mi></mml:mrow></mml:math> interface

Based on the ab initio calculations, we study electronic structure of BiTeI/MnBi2Te4 heterostructure interface composed anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and polar semiconductor trilayer BiTeI. We found significant difference in properties at different types contact between substrate overlayer. While case Te-Te forms natural expansion substrate, when Dirac cone state locates mostly overlayer region undergoes slight exchange splitting, Te-I is source four-band contributed by Rashba-type trilayer. Owing to magnetic proximity, pair Kramers degeneracies for this are lifted, what produces Hall response transport regime. believe, our findings provide new opportunities construct novel type spintronic devices.